Mesa Contact for MOS Controlled Power Semiconductor Device and Method of Producing a Power Semiconductor Device

A power semiconductor device includes: a semiconductor body having a first surface and a mesa portion that includes a surface part of the first surface and a body region; at least two trenches extending from the first surface into the semiconductor body along a vertical direction, each trench includ...

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Bibliographic Details
Main Author Karmous, Alim
Format Patent
LanguageEnglish
Published 25.08.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A power semiconductor device includes: a semiconductor body having a first surface and a mesa portion that includes a surface part of the first surface and a body region; at least two trenches extending from the first surface into the semiconductor body along a vertical direction, each trench including a trench electrode and trench insulator insulating the trench electrode from the semiconductor body, the mesa portion being laterally confined by the trenches in a first vertical cross-section along a first lateral direction; and a contact plug in contact with the body region. The contact plug and trench electrode of a first trench laterally overlap at least partially in the first vertical cross-section. A protection structure having a portion arranged within the first trench is arranged between the contact plug and trench electrode of the first trench. The protection structure may be an electrically insulation structure or a protective device structure.
Bibliography:Application Number: US202217680456