PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

Disclosed is an interdigitated back contact photovoltaic device that includes a first patterned silicon layer situated on an intrinsic layer, and having the same type of doping as the one of the substrate. First charge collection portions are deposited on predetermined areas of the intrinsic layer,...

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Bibliographic Details
Main Authors STRAHM, Benjamin, BÄTZNER, Derk, LACHENAL, Damien
Format Patent
LanguageEnglish
Published 04.08.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed is an interdigitated back contact photovoltaic device that includes a first patterned silicon layer situated on an intrinsic layer, and having the same type of doping as the one of the substrate. First charge collection portions are deposited on predetermined areas of the intrinsic layer, and include each an amorphous layer portion situated between the predetermined areas and the at least partially nano-crystalline layer portions. The amorphous layer portions have a larger width than the width of the nano-crystalline layer portions. On top if the first patterned silicon layer, a second nano-crystalline silicon layer is deposited that has a doping of a second type being the other of the p-type doping or the n-type doping with respect to the doping-type of the first patterned silicon layer.
Bibliography:Application Number: US202017623811