Silicon Carbide Devices, Semiconductor Devices and Methods for Forming Silicon Carbide Devices and Semiconductor Devices

A silicon carbide device includes a semiconductor substrate comprising a body region and transistor cell that comprises a source region, and a titanium carbide field electrode of the transistor cell, wherein the titanium carbide field electrode is connected to a reference voltage metallization struc...

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Main Authors Santos Rodriguez, Francisco Javier, von Koblinski, Carsten, Siemieniec, Ralf, Aichinger, Thomas, Moder, Iris, Schulze, Hans-Joachim
Format Patent
LanguageEnglish
Published 04.08.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A silicon carbide device includes a semiconductor substrate comprising a body region and transistor cell that comprises a source region, and a titanium carbide field electrode of the transistor cell, wherein the titanium carbide field electrode is connected to a reference voltage metallization structure or connectable to the reference voltage metallization structure by a switching device, wherein the reference voltage metallization is connected to a fixed voltage that is independent from a gate voltage of the transistor cell.
Bibliography:Application Number: US202217726618