PARAMETER ESTIMATION WITH MACHINE LEARNING FOR FLASH CHANNEL

Estimation of read parameters for a read channel of a solid-state storage device using a machine learning apparatus. The machine learning apparatus may be provided with signal count metrics from multiple regions of the memory cell signal space and syndrome weights from an error correction code. Othe...

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Bibliographic Details
Main Authors PATAPOUTIAN, Ara, WANG, Zheng
Format Patent
LanguageEnglish
Published 21.07.2022
Subjects
BASIC ELECTRONIC CIRCUITRY
CALCULATING
CODE CONVERSION IN GENERAL
CODING
COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
COMPUTING
COUNTING
DECODING
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:Estimation of read parameters for a read channel of a solid-state storage device using a machine learning apparatus. The machine learning apparatus may be provided with signal count metrics from multiple regions of the memory cell signal space and syndrome weights from an error correction code. Other inputs may also be provided comprising metrics of the memory or read operations. In an example, the read parameters may include one or more reference threshold voltage values for read voltages applied to a memory cell and/or log-likelihood ratio (LLR) values for the memory cell.
Bibliography:Application Number: US202117150861