SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

A semiconductor device is provided, including a substrate having a first epitaxial layer arranged thereon and a voltage blocking element arranged in the first epitaxial layer, a second epitaxial layer arranged on the first epitaxial layer, and a vertical switching element arranged in the second epit...

Full description

Saved in:
Bibliographic Details
Main Authors Rutter, Phil, Kim, Hungjin
Format Patent
LanguageEnglish
Published 14.07.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A semiconductor device is provided, including a substrate having a first epitaxial layer arranged thereon and a voltage blocking element arranged in the first epitaxial layer, a second epitaxial layer arranged on the first epitaxial layer, and a vertical switching element arranged in the second epitaxial layer.
Bibliography:Application Number: US202217572861