COMPOSITION AND PROCESS FOR ELECTIVELY ETCHING A HARD MASK AND/OR AN ETCH-STOP LAYER IN THE PRESENCE OF LAYERS OF LOW-K MATERIALS, COPPER, COBALT AND/OR TUNGSTEN

• Main Authors: Klipp, Andreas, Wang, Che Wei, Hoogboom, Joannes Theodorus Valentinus, Ke, Jhih Jheng, Ting, Chia Ching
• Format: Patent
• Language: English
• Published: 14.07.2022
• Subjects: ADHESIVES; ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES; BASIC ELECTRIC ELEMENTS; CANDLES; CHEMISTRY; DETERGENT COMPOSITIONS; DETERGENTS; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FATTY ACIDS THEREFROM; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; PAINTS; POLISHES; RECOVERY OF GLYCEROL; RESIN SOAPS; SEMICONDUCTOR DEVICES; SOAP OR SOAP-MAKING; USE OF SINGLE SUBSTANCES AS DETERGENTS

Described herein is a method of using a cleaning composition in combination with one or more oxidants for removing post-etch or post-ash residue from the surface of a semiconductor substrate and/or for oxidative etching or partially oxidative etching of a layer or mask. Also described herein is the cleaning composition and a method of using the cleaning composition for removing post-etch or post-ash residue from the surface of a semiconductor substrate. Also described herein is a wet-etch composition including the cleaning composition and one or more oxidants as well as a method of using the wet-etch composition. Also described herein are a process for the manufacture of a semiconductor device from a semiconductor substrate and a kit including the cleaning composition and one or more oxidants.