METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE

The application provides a method for manufacturing a semiconductor structure and the semiconductor structure, and relates to the technical field of semiconductors. The method for manufacturing the semiconductor structure includes: providing a base; sequentially stacking an initial conductive layer,...

Full description

Saved in:
Bibliographic Details
Main Authors Chen, Yang, CHENG, Mingxia
Format Patent
LanguageEnglish
Published 07.07.2022
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:The application provides a method for manufacturing a semiconductor structure and the semiconductor structure, and relates to the technical field of semiconductors. The method for manufacturing the semiconductor structure includes: providing a base; sequentially stacking an initial conductive layer, an initial first dielectric layer, an initial first mask layer, an initial second dielectric layer, an initial second mask layer and a photoresist layer with a pattern on the base; and etching part of the initial second mask layer, part of the initial second dielectric layer and part of the initial first mask layer by taking the photoresist layer as a mask, so as to form a second dielectric layer with a trapezoidal structure which is of a structure with small top and large bottom.
Bibliography:Application Number: US202117468469