ETCHANT FOR ETCHING A COBALT-CONTAINING MEMBER IN A SEMICONDUCTOR STRUCTURE AND METHOD OF ETCHING A COBALT-CONTAINING MEMBER IN A SEMICONDUCTOR STRUCTURE
A method of etching a cobalt-containing member in a semiconductor structure includes providing an etchant including a fluorine-free acid and an alkaline solution having a pH value between 8.5 and 13, and etching the cobalt-containing member in the semiconductor structure using the etchant, wherein a...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
07.07.2022
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Subjects | |
Online Access | Get full text |
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Summary: | A method of etching a cobalt-containing member in a semiconductor structure includes providing an etchant including a fluorine-free acid and an alkaline solution having a pH value between 8.5 and 13, and etching the cobalt-containing member in the semiconductor structure using the etchant, wherein a rate of etching the cobalt-containing member by the etchant is substantially greater than a rate of etching a nitride-containing member by the etchant. An etchant for etching a cobalt-containing member in a semiconductor structure includes a fluorine-free acid, and an alkaline solution having a pH value between 8.5 and 13; wherein a rate of etching a cobalt-containing member by the etchant is substantially greater than a rate of etching a nitride-containing member by the etchant, and a level of dissolved oxygen of the etchant is substantially less than or equal to 100 ppb. |
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Bibliography: | Application Number: US202117141882 |