SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME

• Main Authors: Kim, Yong Seok, Hong, Jae Ho, Cho, Min Hee, Lee, Kyung Hwan, Kim, Il Gweon, Kim, Hui-Jung
• Format: Patent
• Language: English
• Published: 23.06.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

A semiconductor memory device in which performance and reliability are improved, and a method for fabricating the same are provided. The semiconductor memory device includes a conductive line extending in a first direction on a substrate, an interlayer insulation film that includes a cell trench extending in a second direction intersecting the first direction, on the substrate, a first gate electrode and a second gate electrode that are spaced apart from each other in the first direction and each extend in the second direction, inside the cell trench, a channel layer that is inside the cell trench and is electrically connected to the conductive line, on the first gate electrode and the second gate electrode, and a gate insulation layer interposed between the first gate electrode and the channel layer, and between the second gate electrode and the channel layer.