LATERAL GATE MATERIAL ARRANGEMENTS FOR QUANTUM DOT DEVICES

Disclosed herein are lateral gate material arrangements for quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; and a gate above the quantum well stack, wherein the gate includes a gate elect...

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Bibliographic Details
Main Authors Amin, Payam, Clarke, James S, Bojarski, Stephanie A, George, Hubert C, Pillarisetty, Ravi, Keys, Patrick H, Luethi, Florian, Caudillo, Roman, Kotlyar, Roza
Format Patent
LanguageEnglish
Published 16.06.2022
Subjects
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
COMPUTING
COUNTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:Disclosed herein are lateral gate material arrangements for quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; and a gate above the quantum well stack, wherein the gate includes a gate electrode, the gate electrode includes a first material proximate to side faces of the gate and a second material proximate to a center of the gate, and the first material has a different material composition than the second material.
Bibliography:Application Number: US202017117337