SELF-ALIGNED DOUBLE PATTERNING WITH SPACER-MERGE REGION

A method of forming a semiconductor structure includes forming a dielectric layer, forming a plurality of mandrel lines over the dielectric layer, and forming a plurality of non-mandrel lines over the dielectric layer between adjacent ones of the mandrel lines utilizing self-aligned double patternin...

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Bibliographic Details
Main Authors Lai, Kafai, Topaloglu, Rasit Onur, Shao, Dongbing, Xu, Zheng
Format Patent
LanguageEnglish
Published 09.06.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming a semiconductor structure includes forming a dielectric layer, forming a plurality of mandrel lines over the dielectric layer, and forming a plurality of non-mandrel lines over the dielectric layer between adjacent ones of the mandrel lines utilizing self-aligned double patterning. The method also includes forming at least one spacer-merge region extending from a first portion of a first one of the mandrel lines to a second portion of a second one of the mandrel lines in a first direction and covering at least a portion of one or more of the non-mandrel lines between the first mandrel and the second mandrel in a second direction orthogonal to the first direction. The method further includes forming a plurality of trenches in the dielectric layer by transferring a pattern of (i) the mandrel lines and (ii) portions of the non-mandrel lines outside the at least one spacer-merge region.
Bibliography:Application Number: US202217677469