SEMICONDUCTOR MEMORY DEVICE

A three-dimensional semiconductor memory device is provided. The semiconductor memory device includes first horizontal conductive lines on a substrate in a first direction, each of the first horizontal conductive lines extending in a second direction different from the first direction, second horizo...

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Bibliographic Details
Main Authors KIM, Il Gweon, LEE, Kyung Hwan, KIM, Kwang Seok, LEE, Kil Ho, KIM, Yong Seok
Format Patent
LanguageEnglish
Published 19.05.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A three-dimensional semiconductor memory device is provided. The semiconductor memory device includes first horizontal conductive lines on a substrate in a first direction, each of the first horizontal conductive lines extending in a second direction different from the first direction, second horizontal conductive lines stacked on the substrate in the first direction, each of the second horizontal conductive lines extending in the second direction, a vertical conductive line between the first horizontal conductive line and the second horizontal conductive line and extending in the first direction, a plurality of first magnetic tunnel junction patterns between the vertical conductive line and each of the first horizontal conductive lines, and a plurality of second magnetic tunnel junction patterns between the vertical conductive lines and each of the second horizontal conductive lines. The first horizontal conductive lines and the second horizontal conductive lines are spaced apart from each other in a third direction.
Bibliography:Application Number: US202117380331