MEMORY WITH FINE GRAIN ARCHITECTURES

Methods, systems, and devices for memory with fine grain architectures are described. An apparatus may include a memory device, a first organic substrate, and a second organic substrate. The first organic substrate may include a plurality of first conductive lines arranged with a first pitch that ma...

Full description

Saved in:
Bibliographic Details
Main Author Keeth, Brent
Format Patent
LanguageEnglish
Published 05.05.2022
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:Methods, systems, and devices for memory with fine grain architectures are described. An apparatus may include a memory device, a first organic substrate, and a second organic substrate. The first organic substrate may include a plurality of first conductive lines arranged with a first pitch that may power one or more components of the memory device. The second organic substrate may be coupled with the memory device and the first organic substrate. The second organic substrate may include a plurality of second conductive lines arranged with a second pitch smaller than the first pitch and may be configured to route signals between the memory device with a host device.
Bibliography:Application Number: US202117494606