OPTOELECTRONIC SEMICONDUCTOR DEVICE COMPRISING FIRST AND SECOND REGIONS OF A FIRST SEMICONDUCTOR LAYER AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC SEMICONDUCTOR DEVICE

• Main Author: EBERHARD, Franz
• Format: Patent
• Language: English
• Published: 21.04.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An optoelectronic semiconductor device may include a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type. The first and second semiconductor layers may be part of a semiconductor layer stack. The optoelectronic semiconductor device may include an electrically conductive layer arranged over a surface of the first semiconductor layer facing away from the second semiconductor layer. The electrically conductive layer may be directly adjacent to first regions of the first semiconductor layer. The electrically conductive layer may be removed from second regions of the first semiconductor layer, or a dielectric material may be arranged between second regions of the first semiconductor layer and the current spreading layer. The smallest horizontal dimension of the second regions may be less than 2 μm.