FORMATION OF GATE ALL AROUND DEVICE

Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise an oxide layer and a semiconductor material layer between source regions and drain regions of the device. The method includes growing a conformal epitaxial layer on a nanosheet channel layer...

Full description

Saved in:
Bibliographic Details
Main Authors Kim, Myungsun, Davey, Eric, Colombeau, Benjamin, Lo, Andy, Stolfi, Michael
Format Patent
LanguageEnglish
Published 21.04.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise an oxide layer and a semiconductor material layer between source regions and drain regions of the device. The method includes growing a conformal epitaxial layer on a nanosheet channel layer, followed by radical plasma oxidation (RPO) to oxidize the conformal epitaxial layer. An alternative method includes growing a conformal epitaxial layer on a nanosheet channel layer, followed by a surface treatment, and then radical plasma oxidation (RPO) to oxidize the conformal epitaxial layer.
Bibliography:Application Number: US202117498098