METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES

The present disclosure describes method to form a semiconductor device having a gate dielectric layer with controlled doping and to form multiple devices with different Vt. The method includes forming a gate dielectric layer on a fin structure, forming a buffer layer on the gate dielectric layer, an...

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Bibliographic Details
Main Authors TSAI, Chia-Ming, Yu, Tien-Wei, SAVANT, Chandrashekhar Prakash
Format Patent
LanguageEnglish
Published 14.04.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present disclosure describes method to form a semiconductor device having a gate dielectric layer with controlled doping and to form multiple devices with different Vt. The method includes forming a gate dielectric layer on a fin structure, forming a buffer layer on the gate dielectric layer, and forming a dopant source layer including a dopant on the buffer layer. The gate dielectric layer includes an interfacial layer on the fin structure and a high-k dielectric layer on the interfacial layer. The method further includes doping a portion of the high-k dielectric layer adjacent to the interfacial layer with the dopant, removing the dopant source layer and the buffer layer, forming a dopant pulling layer on the gate dielectric layer, and tuning the dopant in the gate dielectric layer by the dopant pulling layer.
Bibliography:Application Number: US202017070232