BOND PAD STRUCTURE WITH REDUCED STEP HEIGHT AND INCREASED ELECTRICAL ISOLATION

Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes forming a first bond pad isolation structure within a substrate. A second bond pad isolation structure is formed with the substrate. The second bond pad isolation st...

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Bibliographic Details
Main Authors Chou, Shih-Pei, Lu, Jiech-Fun
Format Patent
LanguageEnglish
Published 14.04.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes forming a first bond pad isolation structure within a substrate. A second bond pad isolation structure is formed with the substrate. The second bond pad isolation structure is disposed laterally between inner sidewalls of the first bond pad isolation structure. The first bond pad isolation structure and the second bond pad isolation structure are formed concurrently with one another. A bond pad is formed extending through the substrate. The bond pad comprises a conductive body overlying the second bond pad isolation structure and a conductive protrusion extending from the conductive body to below the substrate. The second bond pad isolation structure laterally wraps around the conductive protrusion.
Bibliography:Application Number: US202117555896