HYDROGENATED AMORPHOUS SILICON DETECTOR
The invention refers to a detector based on 3D geometry made from a hydrogenated amorphous silicon substrate. This detector finds application in the detection of ionizing radiation.
Saved in:
Main Author | |
---|---|
Format | Patent |
Language | English |
Published |
14.04.2022
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | The invention refers to a detector based on 3D geometry made from a hydrogenated amorphous silicon substrate. This detector finds application in the detection of ionizing radiation. |
---|---|
Bibliography: | Application Number: US201917297441 |