SEMICONDUCTOR MEMORY DEVICE
A semiconductor memory device includes: a tunnel insulating layer disposed between a conductive pattern and a channel layer; a data storage layer disposed between the conductive pattern and the tunnel insulating layer, the data storage layer including a silicon nitride layer; a first blocking insula...
Saved in:
Main Authors | , , , , , , , , , , , |
---|---|
Format | Patent |
Language | English |
Published |
31.03.2022
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A semiconductor memory device includes: a tunnel insulating layer disposed between a conductive pattern and a channel layer; a data storage layer disposed between the conductive pattern and the tunnel insulating layer, the data storage layer including a silicon nitride layer; a first blocking insulating layer disposed between the conductive pattern and the data storage layer; a second blocking insulating layer disposed between the conductive pattern and the first blocking insulating layer; and a carbon containing layer disposed at at least one position among a position between the tunnel insulating layer and the data storage layer, a position between the first blocking insulating layer and the data storage layer, a position in the tunnel insulating layer, and a position between the first blocking insulating layer and the second blocking insulating layer. |
---|---|
Bibliography: | Application Number: US202117215814 |