SEMICONDUCTOR MEMORY DEVICE

A semiconductor memory device includes: a tunnel insulating layer disposed between a conductive pattern and a channel layer; a data storage layer disposed between the conductive pattern and the tunnel insulating layer, the data storage layer including a silicon nitride layer; a first blocking insula...

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Bibliographic Details
Main Authors YOO, Dong Chul, YUN, Jae Jin, OH, Jin Ho, NOH, Su Jin, PARK, Jae O, JEON, Yoo Il, NOH, Young Jin, BIN, Jin Ho, LEE, Su Hyun, KIM, Seok Joo, GWON, Tae Hong, KWON, Il Young
Format Patent
LanguageEnglish
Published 31.03.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor memory device includes: a tunnel insulating layer disposed between a conductive pattern and a channel layer; a data storage layer disposed between the conductive pattern and the tunnel insulating layer, the data storage layer including a silicon nitride layer; a first blocking insulating layer disposed between the conductive pattern and the data storage layer; a second blocking insulating layer disposed between the conductive pattern and the first blocking insulating layer; and a carbon containing layer disposed at at least one position among a position between the tunnel insulating layer and the data storage layer, a position between the first blocking insulating layer and the data storage layer, a position in the tunnel insulating layer, and a position between the first blocking insulating layer and the second blocking insulating layer.
Bibliography:Application Number: US202117215814