TRANSISTORS INCLUDING TWO-DIMENSIONAL MATERIALS

Disclosed herein are transistors including two-dimensional materials, as well as related methods and devices. In some embodiments, a transistor may include a first two-dimensional channel material and a second two-dimensional source/drain (S/D) material in a source/drain (S/D), and the first two-dim...

Full description

Saved in:
Bibliographic Details
Main Authors Naylor, Carl Hugo, Gosavi, Tanay Arun, Dorow, Chelsey Jane, Avci, Uygar E, Penumatcha, Ashish Verma, O'Brien, Kevin P, Maxey, Kirby Kurtis, Alaan, Urusa Shahriar
Format Patent
LanguageEnglish
Published 31.03.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Disclosed herein are transistors including two-dimensional materials, as well as related methods and devices. In some embodiments, a transistor may include a first two-dimensional channel material and a second two-dimensional source/drain (S/D) material in a source/drain (S/D), and the first two-dimensional material and the second two-dimensional material may have different compositions or thicknesses. In some embodiments, a transistor may include a first two-dimensional material in a channel and a second two-dimensional material in a source/drain (S/D), wherein the first two-dimensional material is a single-crystal material, and the second two-dimensional material is a single-crystal material.
Bibliography:Application Number: US202017032989