METHOD FOR FORMING RECESS AND FILLING EPITAXIAL LAYER IN SITU

The present application discloses a method for forming a recess, which comprises the following steps: step 1: performing a dry etching process to a silicon substrate to form a U-shaped or ball-shaped recess; step 2: performing second etching to the recess by introducing HCl and GeH4 reaction gases i...

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Bibliographic Details
Main Authors Nie, Wangxin, Tu, Huojin, Liu, Jueyang, Zheng, Yincheng, Hu, Zhanyuan, WANG, Yaozeng
Format Patent
LanguageEnglish
Published 31.03.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present application discloses a method for forming a recess, which comprises the following steps: step 1: performing a dry etching process to a silicon substrate to form a U-shaped or ball-shaped recess; step 2: performing second etching to the recess by introducing HCl and GeH4 reaction gases in an epitaxial process chamber to form diamond-shaped recess. The present application further discloses a method for forming a recess and filling the recess with an epitaxial layer in situ. The disclosed etching changes U-shaped or ball-shaped reaction recess diamond-shaped recess by including reaction gases in the epitaxial process chamber, which is conducive to realizing the in-situ epitaxial filling process. This method reduces steps in the process loop of forming embedded epitaxial layer, thus decreasing defects from the process.
Bibliography:Application Number: US202117158901