Hybrid RF Integrated Circuit Device

The present disclosure relates to an RF amplifier device including an IC chip including at least one transistor formed on a substrate, at least one operational circuit formed on the substrate and electrically coupled to the transistor, and a port configured to electrically couple the at least one op...

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Bibliographic Details
Main Authors Ahmed, Abdulrhman M. S, Zhao, Lei, Durnan, Greg
Format Patent
LanguageEnglish
Published 17.03.2022
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Summary:The present disclosure relates to an RF amplifier device including an IC chip including at least one transistor formed on a substrate, at least one operational circuit formed on the substrate and electrically coupled to the transistor, and a port configured to electrically couple the at least one operational circuit with operational circuitry outside the IC chip to adjust operation of the operational circuitry.
Bibliography:Application Number: US202017022221