Electronic Device Including a Charge Storage Component

• Main Authors: Venkatraman, Prasad, Probst, Dean E, Loechelt, Gary Horst, Padmanabhan, Balaji, Sarkar, Tirthajyoti, Ger, Muh-Ling
• Format: Patent
• Language: English
• Published: 10.03.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A circuit and physical structure can help to counteract non-linear COSS associated with power transistors that operate at higher switching speeds and lower RDSON. In an embodiment, a component with a pn junction can be coupled to an n-channel IGFET. The component can include a p-channel IGFET, a pnp bipolar transistor, or both. A gate/capacitor electrode can be within a trench that is adjacent to the active regions of the component and n-channel IGFET, where the active regions can be within a semiconductor pillar. The combination of a conductive member and the semiconductor pillar of the component can be a charge storage component. The physical structure may include a compensation region, a barrier doped region, or both. In a particular embodiment, doped surface regions can be coupled to a buried conductive region without the use of a topside interconnect or a deep collector type of structure.