Electronic Device Including Doped Regions and a Trench Between the Doped Regions

An electronic device can include doped regions and a trench disposed between the doped regions, wherein the trench can include a conductive member. In an embodiment, a parasitic transistor can include doped regions as drain/source regions and the conductive member as a gate electrode. A semiconducto...

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Bibliographic Details
Main Authors Venkatraman, Prasad, Probst, Dean E, Loechelt, Gary Horst, Padmanabhan, Balaji, Sarkar, Tirthajyoti, Ger, Muh-Ling
Format Patent
LanguageEnglish
Published 10.03.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An electronic device can include doped regions and a trench disposed between the doped regions, wherein the trench can include a conductive member. In an embodiment, a parasitic transistor can include doped regions as drain/source regions and the conductive member as a gate electrode. A semiconductor material can lie along a bottom or sidewall of the trench and be a channel region of the parasitic transistor. The voltage on the gate electrode or the dopant concentration can be selected so that the channel region does not reach inversion during the normal operation of the electronic device.
Bibliography:Application Number: US202017016708