SEMICONDUCTOR MASK RESHAPING USING A SACRIFICIAL LAYER

Provided herein are methods and related apparatus for mask reconstruction in an etch process. The methods involve depositing a sacrificial layer on the mask layer. The sacrificial layer may be used to protect position on the mask layer. Following mask reshaping, the sacrificial layer may be removed...

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Bibliographic Details
Main Authors Su, Xiaofeng, Tan, Zhongkui, Xiang, Hua, Qin, Ce
Format Patent
LanguageEnglish
Published 10.03.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided herein are methods and related apparatus for mask reconstruction in an etch process. The methods involve depositing a sacrificial layer on the mask layer. The sacrificial layer may be used to protect position on the mask layer. Following mask reshaping, the sacrificial layer may be removed using the same etch process that is used to etch the target material.
Bibliography:Application Number: US202017310772