MICRO SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

A micro semiconductor structure includes a substrate, a dissociative layer, a protective layer and a micro semiconductor. The dissociative layer is located on one side of the substrate. The protective layer is located on at least one side of the substrate. The micro semiconductor is located on the s...

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Bibliographic Details
Main Authors WU, BO-WEI, LO, YU-YUN, YANG, SHIANG-NING, SHIH, YIUN
Format Patent
LanguageEnglish
Published 03.03.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A micro semiconductor structure includes a substrate, a dissociative layer, a protective layer and a micro semiconductor. The dissociative layer is located on one side of the substrate. The protective layer is located on at least one side of the substrate. The micro semiconductor is located on the side of the substrate. The transmittance of the protective layer for a light source with wavelength smaller than 360 nm is less than 20%.
Bibliography:Application Number: US202017109161