Integrated Assemblies and Methods of Forming Integrated Assemblies

• Main Authors: Sandhu, Gurtej S, Hwang, David K, Hill, Richard J
• Format: Patent
• Language: English
• Published: 03.03.2022
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Some embodiments include an integrated assembly having first conductive structures extending along a first direction. Spaced-apart upwardly-opening container-shapes are over the first conductive structures. Each of the container-shapes has a first sidewall region, a second sidewall region, and a bottom region extending from the first sidewall region to the second sidewall region. Each of the first and second sidewall regions includes a lower source/drain region, an upper source/drain region, and a channel region between the upper and lower source/drain regions. The lower source/drain regions are electrically coupled with the first conductive structures. Second conductive structures extend along a second direction which crosses the first direction. The second conductive structures have gate regions operatively adjacent the channel regions. Storage elements are electrically coupled with the upper source/drain regions. Some embodiments include methods of forming integrated assemblies.