SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

A semiconductor device includes an active region that extends in a first direction and has a first width in a second direction that intersects the first direction, a first gate structure disposed on the active region that has a second width in the first direction and extends in the second direction,...

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Bibliographic Details
Main Authors KIM, SEUNG YOON, Han, Jee Hoon, Sim, Jae Ryong
Format Patent
LanguageEnglish
Published 03.02.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes an active region that extends in a first direction and has a first width in a second direction that intersects the first direction, a first gate structure disposed on the active region that has a second width in the first direction and extends in the second direction, a first metal contact spaced apart from the first gate structure in the first direction, a first trench formed in the active region, and an insulating material that fills the first trench and forms a first active cut, wherein the first active cut defines a first metal region in the active region in which the first metal contact is located, and the first metal contact is placed off-center inside the first metal region and a length of a region where the first gate structure and the active region overlap is greater than that of the first and second trenches.
Bibliography:Application Number: US202117334589