SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING SAME

A semiconductor structure and a method for manufacturing the same are provided. The manufacturing method includes: providing a semiconductor substrate having trench isolation layers and a plurality of active areas; removing a preset thickness of the trench isolation layers to form a plurality of ope...

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Bibliographic Details
Main Author Chou, Chung Yen
Format Patent
LanguageEnglish
Published 27.01.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor structure and a method for manufacturing the same are provided. The manufacturing method includes: providing a semiconductor substrate having trench isolation layers and a plurality of active areas; removing a preset thickness of the trench isolation layers to form a plurality of openings which expose the upper parts of the active areas; forming additional layers on side walls of the exposed upper parts of the active areas; and forming filling isolation layers in the openings to fill the openings, the filling isolation layers and the retained trench isolation layers together constituting first shallow trench isolation structures.
Bibliography:Application Number: US202117498071