MEMORY DEVICE

A memory device includes a substrate, an active layer spaced apart from a surface of the substrate and laterally oriented in a first direction and including an opened first side, a closed second side, and a channel layer between the first side and the second side, and a word line laterally oriented...

Full description

Saved in:
Bibliographic Details
Main Authors SHEEN, Dong Sun, KIM, Il Do, KIM, Seung Hwan
Format Patent
LanguageEnglish
Published 06.01.2022
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A memory device includes a substrate, an active layer spaced apart from a surface of the substrate and laterally oriented in a first direction and including an opened first side, a closed second side, and a channel layer between the first side and the second side, and a word line laterally oriented in a second direction crossing the first direction while surrounding the channel layer.
Bibliography:Application Number: US202117158756