PLASMA PROCESSING APPARATUS
A plasma processing apparatus includes a chamber; a dielectric window, a first antenna for generating plasma within the chamber, and a first power supply for supplying RF power to the first antenna. Power is fed to a first line constituting the first antenna from the first power supply and the vicin...
Saved in:
Main Authors | , , |
---|---|
Format | Patent |
Language | English |
Published |
06.01.2022
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A plasma processing apparatus includes a chamber; a dielectric window, a first antenna for generating plasma within the chamber, and a first power supply for supplying RF power to the first antenna. Power is fed to a first line constituting the first antenna from the first power supply and the vicinity of the midpoint is grounded so that the first antenna resonates at a wavelength that is ½ of a wavelength of the RF power. The first antenna includes a first portion close to a first end with reference to a first position separated from the first end by a first distance toward a central portion of the first line, a second portion close to a second end with reference to a second position separated from the second end by a second distance toward the central portion, and a first intermediate portion between the first and second portions. |
---|---|
Bibliography: | Application Number: US202117361868 |