SEMICONDUCTOR DEVICE INCLUDING LINER STRUCTURE

A semiconductor device includes an interconnect structure embedded in a first metallization layer comprising a dielectric material. The interconnect structure includes a first metal material. The semiconductor device includes a first liner structure embedded in the first metallization layer. The fir...

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Bibliographic Details
Main Authors Peng, Chao-Hsien, Yeh, Ching-Fu, Li, Andy, Chan, Yu-Chen, Lu, Meng-Pei, Yang, Shin-Yi, Luo, Guanyu, Lee, Ming-Han
Format Patent
LanguageEnglish
Published 30.12.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes an interconnect structure embedded in a first metallization layer comprising a dielectric material. The interconnect structure includes a first metal material. The semiconductor device includes a first liner structure embedded in the first metallization layer. The first liner structure is extended along one or more boundaries of the interconnect structure in the first metallization layer. The first liner structure includes a second metal material reacted with one or more dopants, the second metal material being different from the first metal material.
Bibliography:Application Number: US202016912284