PAGE BUFFER AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME

Provided herein may be a page buffer and a semiconductor memory device having the same. The page buffer may include a sensing node, of which a potential is controlled based on an amount of current flowing through a bit line during a data sensing operation and based on a potential of a page buffer co...

Full description

Saved in:
Bibliographic Details
Main Author PARK, Kang Woo
Format Patent
LanguageEnglish
Published 30.12.2021
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:Provided herein may be a page buffer and a semiconductor memory device having the same. The page buffer may include a sensing node, of which a potential is controlled based on an amount of current flowing through a bit line during a data sensing operation and based on a potential of a page buffer common node during a data transmission operation, and a main latch component configured to latch data based on the potential of the sensing node, wherein the main latch component latches the data depending on a first trip voltage and the potential of the sensing node during the data transmission operation, and latches the data depending on a second trip voltage and the potential of the sensing node during the data sensing operation, the first trip voltage and the second trip voltage being different.
Bibliography:Application Number: US202016950385