SEMICONDUCTOR DEVICE MANUFACTURING METHOD

• Main Authors: XU, Kaidong, LIU, Ziming, JIANG, Zhongyuan, REN, Huiqun, CUI, Hushan, HU, Dongdong, CHEN, Lu, WANG, Juebin, ZOU, Zhiwen, CHE, Dongchen
• Format: Patent
• Language: English
• Published: 23.12.2021
• Subjects: ELECTRICITY

A semiconductor device manufacturing method, wherein the etching apparatus used includes a sample loading chamber (15), a vacuum transition chamber (14), a reactive ion plasma etching chamber (10), an ion beam etching chamber (11), a film coating chamber (12), and a vacuum transport chamber (13). Without interrupting the vacuum, reactive ion etching is first adopted to etch to an isolation layer (102); then, ion beam etching is performed to etch into a fixed layer (101) and stopped near a bottom electrode metal layer (100), leaving only a small amount of the fixed layer (101); subsequently, reactive ion etching is adopted to etch to the bottom electrode metal layer (100); and finally, ion beam cleaning is performed to remove metal residues and sample surface treatment, and coating protection is performed.