METHODS FOR OPTICAL PROXIMITY CORRECTION AND METHODS OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

A semiconductor device fabrication method includes providing a layout; performing an optical proximity correction on the layout to generate a corrected layout; and forming a photoresist pattern on a substrate by using a photomask fabricated with the corrected layout. The OPC may include: extracting...

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Bibliographic Details
Main Author Yeo, Sang Chul
Format Patent
LanguageEnglish
Published 23.12.2021
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device fabrication method includes providing a layout; performing an optical proximity correction on the layout to generate a corrected layout; and forming a photoresist pattern on a substrate by using a photomask fabricated with the corrected layout. The OPC may include: extracting edges of a pattern, the edges including a first edge and a second edge that converge to define a corner; generating a thin mask image by applying a thin mask approximation to the pattern; changing the first edge and the second edge into a first stepped edge and a second stepped edge; and applying a three-dimensional filter to the first and second stepped edges to generate an optical image including the corrected layout of the pattern to which the 3D filter is applied from the thin mask image.
Bibliography:Application Number: US202117157229