DIFFUSION BARRIER FOR SEMICONDUCTOR DEVICE AND METHOD

A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the s...

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Main Authors Lee, Ya-Lien, Shih, Huan-Yu, Chen, Wen-Hsuan, Lin, Chun-Chieh, Su, Hung-Wen, Liu, Yao-Min, Kuo, Chia-Pang, Tsai, Cheng-Lun, Weng, Cheng-Hui
Format Patent
LanguageEnglish
Published 16.12.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.
Bibliography:Application Number: US202016899055