GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE SUBSTRATE, AND METHOD OF MANUFACTURING GROUP III NITRIDE CRYSTAL

A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a hydrogen element, and the concentration of the N-type dopant is 1×1020 cm−3 or more, and the concentration of the hydrogen element is 1×1019 cm−3 or more.

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Bibliographic Details
Main Authors SUMI, Tomoaki, KITAMOTO, Akira, OKAYAMA, Yoshio, YOSHIMURA, Masashi, IMANISHI, Masayuki, TAKINO, Junichi, MORI, Yusuke
Format Patent
LanguageEnglish
Published 16.12.2021
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a hydrogen element, and the concentration of the N-type dopant is 1×1020 cm−3 or more, and the concentration of the hydrogen element is 1×1019 cm−3 or more.
Bibliography:Application Number: US202117340416