SWITCHING CONTROL ALGORITHMS ON DETECTION OF EXPOSURE OF UNDERLYING LAYER DURING POLISHING

A method of controlling polishing includes polishing a stack of adjacent conductive layers on a substrate, measuring with an in-situ eddy current monitoring system a sequence of characterizing values for the substrate during polishing, calculating a polishing rate from the sequence of characterizing...

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Bibliographic Details
Main Authors Cherian, Benjamin, Xu, Kun, Lee, Harry Q, Gage, David Maxwell
Format Patent
LanguageEnglish
Published 09.12.2021
Subjects
DRESSING OR CONDITIONING OF ABRADING SURFACES
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
TRANSPORTING
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Summary:A method of controlling polishing includes polishing a stack of adjacent conductive layers on a substrate, measuring with an in-situ eddy current monitoring system a sequence of characterizing values for the substrate during polishing, calculating a polishing rate from the sequence of characterizing values repeatedly during polishing, calculating one or more adjustments for one or more polishing parameters based on a current polishing rate using a first control algorithm for an initial time period, detecting a change in the polishing rate that indicates exposure of the underlying conductive layer, and calculating one or more adjustments for one or more polishing parameters based on the polishing rate using a different second control algorithm for a subsequent time period after detecting the change in the polishing rate.
Bibliography:Application Number: US202117341283