DIODE STRUCTURE AND METHOD OF FABRICATING THE SAME

A diode structure includes a substrate, a pillar stack disposed on the substrate, and a first barrier layer. The pillar stack includes a first semiconductor layer, a silicon layer, and a second semiconductor layer, in which the first and second semiconductor layers respectively have different dopant...

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Bibliographic Details
Main Authors ZHU, Yu, LAM, Chung-Hon, WU, Cheng-En, ZHUANG, HAOREN, LO, Kuo-Feng, HSU, Yen-Yu
Format Patent
LanguageEnglish
Published 02.12.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A diode structure includes a substrate, a pillar stack disposed on the substrate, and a first barrier layer. The pillar stack includes a first semiconductor layer, a silicon layer, and a second semiconductor layer, in which the first and second semiconductor layers respectively have different dopants such that a conductivity of the first semiconductor layer is different from a conductivity of the second semiconductor layer. The first barrier layer is disposed between the first semiconductor layer and the silicon layer, in which the first barrier layer is configured to prevent the dopants in the first semiconductor layer from diffusing into the silicon layer.
Bibliography:Application Number: US202016931464