INTEGRATED CIRCUIT DEVICE INCLUDING VERTICAL MEMORY DEVICE

An integrated circuit device includes: a substrate having a cell region, a peripheral circuit region, and an interconnection region between the cell region and the peripheral circuit region; a first cell stack structure and a second cell stack structure on the first cell stack structure, each includ...

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Bibliographic Details
Main Authors SEOK, Hansol, KIM, Gihwan, HWANG, Changsun, LIM, Jongheun, EUN, Dongseog, KWON, Youngjin
Format Patent
LanguageEnglish
Published 02.12.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An integrated circuit device includes: a substrate having a cell region, a peripheral circuit region, and an interconnection region between the cell region and the peripheral circuit region; a first cell stack structure and a second cell stack structure on the first cell stack structure, each including a plurality of insulating layers and a plurality of word line structures alternately stacked on the substrate; and a dummy stack structure located at a same vertical level as the second cell stack structure, and including a plurality of dummy insulating layers and a plurality of dummy support layers alternately stacked in the peripheral circuit region.
Bibliography:Application Number: US202117140277