POWER SEMICONDUCTOR MODULE

This power semiconductor module includes: a bus bar to which each of first main electrodes of semiconductor switching elements is joined; a heat-dissipating metal substrate to which each of second main electrodes of the semiconductor switching elements is joined; and a control gate terminal connecte...

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Bibliographic Details
Main Author SAKAMOTO, Tatsuro
Format Patent
LanguageEnglish
Published 25.11.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:This power semiconductor module includes: a bus bar to which each of first main electrodes of semiconductor switching elements is joined; a heat-dissipating metal substrate to which each of second main electrodes of the semiconductor switching elements is joined; and a control gate terminal connected to each of gate pads of the semiconductor switching elements by a bonding wire, wherein at least two of the plurality of semiconductor switching elements are arranged adjacently to each other on the heat-dissipating metal substrate and electrically connected in parallel to form one arm.
Bibliography:Application Number: US202117161797