POWER SEMICONDUCTOR MODULE
This power semiconductor module includes: a bus bar to which each of first main electrodes of semiconductor switching elements is joined; a heat-dissipating metal substrate to which each of second main electrodes of the semiconductor switching elements is joined; and a control gate terminal connecte...
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Main Author | |
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Format | Patent |
Language | English |
Published |
25.11.2021
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Subjects | |
Online Access | Get full text |
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Summary: | This power semiconductor module includes: a bus bar to which each of first main electrodes of semiconductor switching elements is joined; a heat-dissipating metal substrate to which each of second main electrodes of the semiconductor switching elements is joined; and a control gate terminal connected to each of gate pads of the semiconductor switching elements by a bonding wire, wherein at least two of the plurality of semiconductor switching elements are arranged adjacently to each other on the heat-dissipating metal substrate and electrically connected in parallel to form one arm. |
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Bibliography: | Application Number: US202117161797 |