Semiconductor Device and Method
In an embodiment, a method includes: forming a first fin extending from a substrate, the substrate including silicon, the first fin including silicon germanium; forming an isolation region around the first fin, an oxide layer being formed on the first fin during formation of the isolation region; re...
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Format | Patent |
Language | English |
Published |
25.11.2021
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Abstract | In an embodiment, a method includes: forming a first fin extending from a substrate, the substrate including silicon, the first fin including silicon germanium; forming an isolation region around the first fin, an oxide layer being formed on the first fin during formation of the isolation region; removing the oxide layer from the first fin with a hydrogen-based etching process, silicon at a surface of the first fin being terminated with hydrogen after the hydrogen-based etching process; desorbing the hydrogen from the silicon at the surface of the first fin to depassivate the silicon; and exchanging the depassivated silicon at the surface of the first fin with germanium at a subsurface of the first fin. |
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AbstractList | In an embodiment, a method includes: forming a first fin extending from a substrate, the substrate including silicon, the first fin including silicon germanium; forming an isolation region around the first fin, an oxide layer being formed on the first fin during formation of the isolation region; removing the oxide layer from the first fin with a hydrogen-based etching process, silicon at a surface of the first fin being terminated with hydrogen after the hydrogen-based etching process; desorbing the hydrogen from the silicon at the surface of the first fin to depassivate the silicon; and exchanging the depassivated silicon at the surface of the first fin with germanium at a subsurface of the first fin. |
Author | Jeng, Pei-Ren Ma, Ta-Chun Li, Yi-Cheng Yen, Cheng-Hsiung Li, Chii-Horng Chau, Cheng-Po Chen, Jung-Jen Chen, Kei-Wei Liang, Pin-Ju |
Author_xml | – fullname: Liang, Pin-Ju – fullname: Yen, Cheng-Hsiung – fullname: Li, Yi-Cheng – fullname: Li, Chii-Horng – fullname: Chau, Cheng-Po – fullname: Ma, Ta-Chun – fullname: Chen, Kei-Wei – fullname: Jeng, Pei-Ren – fullname: Chen, Jung-Jen |
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RelatedCompanies | Taiwan Semiconductor Manufacturing Co., Ltd |
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Snippet | In an embodiment, a method includes: forming a first fin extending from a substrate, the substrate including silicon, the first fin including silicon... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Semiconductor Device and Method |
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