Semiconductor Device and Method

In an embodiment, a method includes: forming a first fin extending from a substrate, the substrate including silicon, the first fin including silicon germanium; forming an isolation region around the first fin, an oxide layer being formed on the first fin during formation of the isolation region; re...

Full description

Saved in:
Bibliographic Details
Main Authors Liang, Pin-Ju, Yen, Cheng-Hsiung, Li, Yi-Cheng, Li, Chii-Horng, Chau, Cheng-Po, Ma, Ta-Chun, Chen, Kei-Wei, Jeng, Pei-Ren, Chen, Jung-Jen
Format Patent
LanguageEnglish
Published 25.11.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:In an embodiment, a method includes: forming a first fin extending from a substrate, the substrate including silicon, the first fin including silicon germanium; forming an isolation region around the first fin, an oxide layer being formed on the first fin during formation of the isolation region; removing the oxide layer from the first fin with a hydrogen-based etching process, silicon at a surface of the first fin being terminated with hydrogen after the hydrogen-based etching process; desorbing the hydrogen from the silicon at the surface of the first fin to depassivate the silicon; and exchanging the depassivated silicon at the surface of the first fin with germanium at a subsurface of the first fin.
Bibliography:Application Number: US202117396948