Microelectromechanical Device with Beam Structure over Silicon Nitride Undercut

In described examples, a microelectromechanical system (MEMS) is located on a substrate. A silicon nitride (SiN) layer on a portion of the substrate. A mechanical structure has first and second ends. The first end is embedded in the SiN layer, and the second end is cantilevered from the SiN layer.

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Bibliographic Details
Main Authors Taylor, Kelly Jay, Summerfelt, Scott Robert, Fruehling, Adam Joseph
Format Patent
LanguageEnglish
Published 18.11.2021
Subjects
MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
TRANSPORTING
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Summary:In described examples, a microelectromechanical system (MEMS) is located on a substrate. A silicon nitride (SiN) layer on a portion of the substrate. A mechanical structure has first and second ends. The first end is embedded in the SiN layer, and the second end is cantilevered from the SiN layer.
Bibliography:Application Number: US202117320188