GRAPHENE DOPING BY THERMAL POLING

A method of forming a graphene device includes: providing a glass substrate with a blocking layer disposed thereon to form a stack; providing a first electrode and a second electrode; increasing the temperature of the stack to at least 100° C.; applying an external electric field (VP) to the first e...

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Bibliographic Details
Main Authors Pruneri, Valerio, Mazumder, Prantik, Marchena Martín-Francés, Miriam
Format Patent
LanguageEnglish
Published 11.11.2021
Subjects
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS
CHEMISTRY
COMPOUNDS THEREOF
GLASS
INORGANIC CHEMISTRY
JOINING GLASS TO GLASS OR OTHER MATERIALS
METALLURGY
MINERAL OR SLAG WOOL
NON-METALLIC ELEMENTS
SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS
SURFACE TREATMENT OF GLASS
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Summary:A method of forming a graphene device includes: providing a glass substrate with a blocking layer disposed thereon to form a stack; providing a first electrode and a second electrode; increasing the temperature of the stack to at least 100° C.; applying an external electric field (VP) to the first electrode such that at least one metal ion of the glass substrate migrates toward the first electrode to create a depletion region in the glass substrate adjacent the second electrode; decreasing the temperature of the stack to room temperature while applying the external electric field to the first electrode; and after reaching room temperature, setting the external electric field to zero to create a frozen voltage region adjacent the second electrode.
Bibliography:Application Number: US201917285322