SWITCHING CIRCUIT, GATE DRIVER AND METHOD OF OPERATING A TRANSISTOR DEVICE

In an embodiment, a switching circuit is provided that includes a Group III nitride-based semiconductor body including a first monolithically integrated Group III nitride-based transistor device and a second monolithically integrated Group III nitride based transistor device that are coupled to form...

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Bibliographic Details
Main Authors Imam, Mohamed, Liu, Chunhui, Lei, Qin, Kim, Hyeongnam, Charles, Alain
Format Patent
LanguageEnglish
Published 04.11.2021
Subjects
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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Summary:In an embodiment, a switching circuit is provided that includes a Group III nitride-based semiconductor body including a first monolithically integrated Group III nitride-based transistor device and a second monolithically integrated Group III nitride based transistor device that are coupled to form a half-bridge circuit and are arranged on a common foreign substrate having a common doping level. The switching circuit is configured to operate the half-bridge circuit at a voltage of at least 300V.
Bibliography:Application Number: US202117237649