SEMICONDUCTOR DEVICES
A semiconductor device includes a substrate having an active region defined by a device isolation film and providing a first channel region; a first source/drain region in the active region on first and second sides of the first channel region; a gate structure having a first gate insulating film, a...
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Format | Patent |
Language | English |
Published |
04.11.2021
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Abstract | A semiconductor device includes a substrate having an active region defined by a device isolation film and providing a first channel region; a first source/drain region in the active region on first and second sides of the first channel region; a gate structure having a first gate insulating film, a shared gate electrode, and a second gate insulating film, sequentially arranged on the active region; a cover semiconductor layer on the second gate insulating film and electrically separated from the active region to provide a second channel region; a second source/drain. region in the cover semiconductor layer on first and second sides of the second channel region first and second source/drain contacts respectively connected to the first and second source/drain regions; and a shared gate contact connected to the shared gate electrode. |
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AbstractList | A semiconductor device includes a substrate having an active region defined by a device isolation film and providing a first channel region; a first source/drain region in the active region on first and second sides of the first channel region; a gate structure having a first gate insulating film, a shared gate electrode, and a second gate insulating film, sequentially arranged on the active region; a cover semiconductor layer on the second gate insulating film and electrically separated from the active region to provide a second channel region; a second source/drain. region in the cover semiconductor layer on first and second sides of the second channel region first and second source/drain contacts respectively connected to the first and second source/drain regions; and a shared gate contact connected to the shared gate electrode. |
Author | LEE, JAEDUK MOON, SUNGSU LEE, SOHYEON JOO, IKHYUNG |
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Snippet | A semiconductor device includes a substrate having an active region defined by a device isolation film and providing a first channel region; a first... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | SEMICONDUCTOR DEVICES |
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