SEMICONDUCTOR DEVICES

• Main Authors: LEE, SOHYEON, LEE, JAEDUK, JOO, IKHYUNG, MOON, SUNGSU
• Format: Patent
• Language: English
• Published: 04.11.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device includes a substrate having an active region defined by a device isolation film and providing a first channel region; a first source/drain region in the active region on first and second sides of the first channel region; a gate structure having a first gate insulating film, a shared gate electrode, and a second gate insulating film, sequentially arranged on the active region; a cover semiconductor layer on the second gate insulating film and electrically separated from the active region to provide a second channel region; a second source/drain. region in the cover semiconductor layer on first and second sides of the second channel region first and second source/drain contacts respectively connected to the first and second source/drain regions; and a shared gate contact connected to the shared gate electrode.