INTEGRATED CIRCUIT STRUCTURE

• Main Authors: LIANG, Chia-Ming, CHANG, Chi-Hsin, NG, Jin-Aun, MOR, Yi-Shien, CHIU, Huai-Hsien, LEE, Yi-Juei
• Format: Patent
• Language: English
• Published: 28.10.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An IC fabrication method includes forming a first fin on a semiconductor substrate, forming an isolation dielectric material over the first fin, and planarizing the isolation dielectric material. A top surface of the first fin is covered by the isolation dielectric material after planarizing the iso...