METHODS FOR FABRICATING THIN FILM III-V COMPOUND SOLAR CELL

The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied t...

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Bibliographic Details
Main Authors McCallum, David, Hillier, Glen, Vu, Duy Phach, Youtsey, Christopher, Pan, Noren, Tatavarti, Rao, Martin, Genevieve
Format Patent
LanguageEnglish
Published 21.10.2021
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Summary:The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.
Bibliography:Application Number: US202117170133